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Advance Technical Information
HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 120N25 IXFK 120N25
VDSS ID25
RDS(on)
= 250 V = 120 A = 22 m
trr 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC TC TC TC = 25C (MOSFET chip capability) = 104C (External lead capability) = 25C, pulse width limited by TJM = 25C
Maximum Ratings 250 250 20 30 120 75 480 90 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W C C C C
PLUS 247TM (IXFX)
G
(TAB) D
TO-264 AA (IXFK)
G
TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C
D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
300
0.7/6 Nm/lb.in. 6 10 g g
Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 250 2.0 V 4.0 V 200 nA TJ = 25C TJ = 125C 50 A 3 mA 22 m
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls
Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density
l
(c) 2002 IXYS All rights reserved
98912 (2/02)
IXFK 120N25 IXFX 120N25
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 62 85 9400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1730 550 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 (External), 38 175 35 400 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 70 155 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
A A1 A2 b b1 b2 C D E e L L1 Q R Dim.
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
V DS = 10 V; ID = 0.5 ID25
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions V GS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 120 480 1.5 250 A A V ns C A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
TO-264 AA Outline
IF = 30A,-di/dt = 100 A/s, VR = 100 V
0.8 8
Dim.
Note: 1. Pulse test, t 300 s, duty cycle d 2 %
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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